Step instability and island formation during annealing of pseudomorphic InGaAs/GaAs layers
Identifieur interne : 00BD62 ( Main/Repository ); précédent : 00BD61; suivant : 00BD63Step instability and island formation during annealing of pseudomorphic InGaAs/GaAs layers
Auteurs : RBID : Pascal:03-0509405Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
The morphological stability of compressively strained In0.27Ga0.73As/GaAs pseudomorphic layers has been investigated during annealing. Large three-dimensional islands form at the beginning of annealing on initially flat surfaces, likely to relieve strain energy. The islands disappear with increasing annealing, being reabsorbed into the terraces. At the same time, the step line destabilizes forming cusps that inject two-dimensional vacancy islands into the terrace. At high temperatures, this process leads to a severe deterioration of the morphology that is not due to decomposition. The island dissolution and the development of the step instability are likely alternative paths towards the reduction of surface energy. © 2003 American Institute of Physics.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 00C541
Links to Exploration step
Pascal:03-0509405Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Step instability and island formation during annealing of pseudomorphic InGaAs/GaAs layers</title><author><name sortKey="Riposan, A" uniqKey="Riposan A">A. Riposan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Michigan, 2300 Hayward, Ann Arbor, Michigan 48109-2136</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Michigan, 2300 Hayward, Ann Arbor</wicri:cityArea></affiliation></author><author><name sortKey="Martin, G K M" uniqKey="Martin G">G. K. M. Martin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Michigan, 2300 Hayward, Ann Arbor, Michigan 48109-2136</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Michigan, 2300 Hayward, Ann Arbor</wicri:cityArea></affiliation></author><author><name sortKey="Millunchick, J Mirecki" uniqKey="Millunchick J">J. Mirecki Millunchick</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Michigan, 2300 Hayward, Ann Arbor, Michigan 48109-2136</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Michigan, 2300 Hayward, Ann Arbor</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0509405</idno><date when="2003-12-01">2003-12-01</date><idno type="stanalyst">PASCAL 03-0509405 AIP</idno><idno type="RBID">Pascal:03-0509405</idno><idno type="wicri:Area/Main/Corpus">00C541</idno><idno type="wicri:Area/Main/Repository">00BD62</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Island structure</term><term>Surface energy</term><term>Surface topography</term><term>surface morphology</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6835B</term><term>6172C</term><term>6855J</term><term>6835M</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Topographie surface</term><term>Structure îlot</term><term>Recuit</term><term>Energie surface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The morphological stability of compressively strained In<sub>0.27</sub>Ga<sub>0.73</sub>As/GaAs pseudomorphic layers has been investigated during annealing. Large three-dimensional islands form at the beginning of annealing on initially flat surfaces, likely to relieve strain energy. The islands disappear with increasing annealing, being reabsorbed into the terraces. At the same time, the step line destabilizes forming cusps that inject two-dimensional vacancy islands into the terrace. At high temperatures, this process leads to a severe deterioration of the morphology that is not due to decomposition. The island dissolution and the development of the step instability are likely alternative paths towards the reduction of surface energy. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>83</s2></fA05><fA06><s2>22</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Step instability and island formation during annealing of pseudomorphic InGaAs/GaAs layers</s1></fA08><fA11 i1="01" i2="1"><s1>RIPOSAN (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>MARTIN (G. K. M.)</s1></fA11><fA11 i1="03" i2="1"><s1>MILLUNCHICK (J. Mirecki)</s1></fA11><fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Michigan, 2300 Hayward, Ann Arbor, Michigan 48109-2136</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>4518-4520</s1></fA20><fA21><s1>2003-12-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0509405</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The morphological stability of compressively strained In<sub>0.27</sub>Ga<sub>0.73</sub>As/GaAs pseudomorphic layers has been investigated during annealing. Large three-dimensional islands form at the beginning of annealing on initially flat surfaces, likely to relieve strain energy. The islands disappear with increasing annealing, being reabsorbed into the terraces. At the same time, the step line destabilizes forming cusps that inject two-dimensional vacancy islands into the terrace. At high temperatures, this process leads to a severe deterioration of the morphology that is not due to decomposition. The island dissolution and the development of the step instability are likely alternative paths towards the reduction of surface energy. © 2003 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H35B</s0></fC02><fC02 i1="02" i2="3"><s0>001B60A72C</s0></fC02><fC02 i1="03" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="04" i2="3"><s0>001B60H35M</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>6835B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>6172C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>6855J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>6835M</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Topographie surface</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Surface topography</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Structure îlot</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Island structure</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Recuit</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Annealing</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>surface morphology</s0><s4>INC</s4></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Energie surface</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Surface energy</s0></fC03><fN21><s1>335</s1></fN21><fN47 i1="01" i2="1"><s0>0347M000114</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 00BD62 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 00BD62 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:03-0509405
|texte= Step instability and island formation during annealing of pseudomorphic InGaAs/GaAs layers
}}
| This area was generated with Dilib version V0.5.77. |  |